Chemical doping to control the in-situ formed doping structure in light-emitting electrochemical cells.

Huseynova, G., Ràfols-Ribé, J., Auroux, E. et al. Sci Rep 13, 11457 (2023).

https://doi.org/10.1038/s41598-023-38006-y

The performance of light-emitting electrochemical cells (LECs) is greatly influenced by the position of the emissive p–n junction within the device. A new "chemical pre-doping" method that incorporates a reductant into the active material ink shifts the p–n junction closer to the anode, which enhances emission efficiency and device stability. This approach offers a practical solution for optimizing the spatial configuration of p–n junctions in LECs.

How Setfos was used

The optical simulations were carried out with Setfos. The position of the emissive p–n junction within the active material was determined by minimizing the root mean square error between the simulated and the measured angle-dependent EL data.

The exciton formation rate profile in the interelectrode gap was determined with the drift–diffusion module of the same software, and the simulated three-layer device featured an ITO anode (thickness = 145 nm), an active material (thickness = 150 nm), and an Al cathode.