Enhanced efficiency of top-emission InP-based green quantum dot light-emitting diodes with optimized angular distribution

PaperSetfos
Written By Fluxim AG

Dong Li, Jingwen Feng, Youqin Zhu, Zhigao Lu, Chen Pei, Zhuo Chen, Yanzhao Li, Xinguo Li & Xiaoguang X

Nano Res. (2021).

doi.org/10.1007/s12274-021-3596-4

In this paper, the researchers fabricated QLEDs with a top and bottom emission structure. They first electrically optimized the device (charge balance) and then optically improved the device in order to then change to a different ETL which optimizes both charge balance and optics at the same time. Setfos was used to perform an optical simulation of the QLEDs with different ETL thicknesses.

Fluxim AG
Previous

Making Room for Growing Oriented FASnI 3 with Large Grains via Cold Precursor Solution
Next

Identification of a multi-stack structure of graphene electrodes doped layer-by-layer with benzimidazole and its implication for the design of optoelectronic devices