Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes

PaperSetfos
Written By Fluxim AG

Junmo Kim, Jeong Ha Hwang, Yong Woo Kwon, Hyeong Woo Bae, Myungchan An, Wonho Lee, Donggu Lee,

Organic Electronics, Volume 97, 2021, 106261,

doi.org/10.1016/j.orgel.2021.106261.

This report details the use of SiNx as encapsulation material. Thickness variation results on EQE were supported by I_OC simulations performed by Setfos.

Fluxim AG
Previous

Identification of a multi-stack structure of graphene electrodes doped layer-by-layer with benzimidazole and its implication for the design of optoelectronic devices
Next

High-efficiency near-infrared OLED microdisplay with fine pixel array