Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications
Abu Bakar Siddik, Epimitheas Georgitzikis, Yannick Hermans, Jubin Kang, Joo Hyoung Kim, Vladimir Pejovic, Itai Lieberman, Pawel E. Malinowski, Andriy Kadashchuk, Jan Genoe, Thierry Conard, David Cheyns, and Paul Heremans
ACS Applied Materials & Interfaces 2023 15 (25), 30534-30542
DOI: 10.1021/acsami.3c03708
This study presents a high-speed, low dark current near-infrared organic photodetector (NIR OPD) on a silicon substrate using amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). Detailed characterization reveals the dark current mechanism as trap-assisted field-enhanced thermal emission, significantly reduced by introducing an interfacial layer. The NIR OPD achieves a low dark current of 125 pA/cm² at -1 V reverse bias and boasts a rapid photo response time, making it suitable for high-quality sample image capture in an imager on a complementary metal oxide semiconductor read-out circuit.
How Paios was used
Q-DLTS and TPV decay measurements were performed using Paios.