Minor Copper-Doped Aluminum Alloy Enabling Long-Lifetime Organic Light-Emitting Diodes

Yun-Jie Lin, Chia-Sheng Huang, Pei-Chung Tsai, Yu-Lun Hsiao, Cheng-Yu Chen, and Jwo-Huei Jou

ACS Applied Materials & Interfaces Article ASAP

DOI: 10.1021/acsami.2c18275

Abstract

Aluminum has been extensively used as a conductor material in numerous electronic devices, including solar cells, light-emitting diodes (LEDs), organic LEDs (OLEDs), and thin-film transistors. However, its spiking surface and easy electromigration have limited its performance.

To overcome this, a trace amount of nonprecious copper dopant has been proven effective in enhancing device reliability. Nevertheless, a comprehensive investigation regarding the effect of copper doping on the morphology at the aluminum conductor–organic interface is yet to be done. We had hence fabricated a series of green OLED devices to probe how copper doping affected the aluminum conductor, morphologically and electrically, and the corresponding device’s efficiency and lifetime performance.

Electrical simulation showing the effect of the cathode work function on the charge density distribution of the studied green OLED devices was performed using Setfos.

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Ultra-fast triplet-triplet-annihilation-mediated high-lying reverse intersystem crossing triggered by participation of nπ*-featured excited states.

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Preferred Orientation Evolution of Hole Transport Materials for High Emitting Dipole Orientation Ratio of the Emitting Material