Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays

Choi, S., Kang, Cm., Byun, CW. et al. Nature Comm, 2732 (2020). https://doi.org/10.1038/s41467-020-16551-8

This study developed thin-film transistor (TFT)-driven, vertically stacked, full-colour organic light-emitting diodes (OLEDs) using photolithography processes. A low-temperature processed Al2O3/SiNx bilayer protected the OLEDs from the photolithography process. The vertically stacked OLEDs have a larger aperture ratio than conventional sub-pixel structures. SETFOS software was used to perform optical simulations to determine the optimal thicknesses of the hole transport layers (HTLs) and electron transport layers (ETLs) for the red, green, and blue (R, G, B) units. The simulation results included 46,656 points. The fabricated OLEDs showed a 112.7% sRGB colour gamut.