Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport

Q. Wang, H. Zhu, Y. Tan, J. Hao, T. Ye, H. Tang, Z. Wang, J. Ma, J. Sun, T. Zhang, F. Zheng, W. Zhang, H. W. Choi, W. C. H. Choy, D. Wu, X. W. Sun, K. Wang. Adv. Mater. 2023, 2305604.

https://doi.org/10.1002/adma.202305604

The paper demonstrates a spin quantum dot light-emitting diode (spin-QLED) using 2D chiral perovskite as a spin injection layer based on the chiral-induced spin selectivity (CISS) effect, enabling spin-dependent carrier transport. It operates at room temperature and zero magnetic field, achieving circularly polarized electroluminescence (CP-EL) with an asymmetric factor of 1.6 × 10^-2. The work highlights the potential of chiral materials in spintronics and quantum-based devices.

How Setfos was used

Setfos simulation was used to analyze the recombination center and carrier recombination rate distribution in the device, providing insights into the performance and guiding future improvements.

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Transient Measurements and Simulations Correlate Exchange Ligand Concentration and Trap States in Colloidal Quantum Dot Photodetectors

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Indication of Intramolecular Triplet–Triplet Annihilation Upconversion in Organic Light-Emitting Diodes