Stoichiometric Engineering of Cs2AgBiBr6 for Photomultiplication- Type Photodetectors

Metikoti Jagadeeswararao, Kyu Min Sim, Sangjun Lee, Mingyun Kang, Sanghyeok An, Geon-Hee Nam, Hye Ryun Sim, Elham Oleiki, Geunsik Lee, and Dae Sung Chung

Chemistry of Materials 2023 35 (8), 3095-3104

DOI: 10.1021/acs.chemmater.2c03271

This study demonstrates high-performance photomultiplication (PM)-type photodetectors using lead-free double perovskite, achieved by engineering trap states and trap-assisted charge injection. With a diode structure, the researchers realized selective hole traps, leading to high external quantum efficiency (EQE) of ∼16,000%, responsivity of ∼50 A W−1, and specific detectivity over 10¹² Jones at -3V. The work highlights PM photodetectors' potential through strategic trap engineering.

Setfos, a Fluxim software, was used for drift-diffusion simulations to gain comprehensive insight into the photomultiplication mechanism in the proposed photodetector.

Previous
Previous

In Situ Determination of the Orientation of the Emissive Dipoles in Light-Emitting Electrochemical Cells

Next
Next

P3HT vs Spiro-OMeTAD as a hole transport layer for halide perovskite indoor photovoltaics and self-powering of motion sensors