Thin-film image sensors with a pinned photodiode structure

Lee, J., Georgitzikis, E., Hermans, Y. et al.

Nat Electron 6, 590–598 (2023).

https://doi.org/10.1038/s41928-023-01016-9

Thin-film image sensors with pinned photodiode structures, using organic or colloidal quantum dot photodiodes, demonstrate noise performance comparable to silicon-based counterparts. These sensors exhibit low noise, reduced dark current, high capacity, and efficient electron-to-voltage conversion. For instance, an organic absorber-based sensor achieves 54% quantum efficiency at 940 nm with 6.1e– read noise.

How Paios was used

The transient photoresponse, photocurrent linearity and capacitance–voltage measurements were performed using a Paios all-in-one system by Fluxim.

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Multifunctional and multi-site interfacial buffer layer for efficient and stable perovskite solar cells

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Multi-Site Intermolecular Interaction for In Situ Formation of Vertically Orientated 2D Passivation Layer in Highly Efficient Perovskite Solar Cells