Understanding and Hindering the Electron Leakage in Green InP Quantum-Dot Light-Emitting Diodes

PaperSetfos
Written By Fluxim AG

Zhang, T., Zhao, F., Liu, P., Tan, Y., Xiao, X., Wang, Z., Wang, W., Wu, D., Sun, X.W., Hao, J., Xing, G. and Wang, K. (2023)

Adv. Photonics Res., 4: 2300146.

https://doi.org/10.1002/adpr.202300146

The paper investigates electron leakage in green InP Quantum-Dot Light-Emitting Diodes (QLEDs), causing carrier imbalance and reduced efficiency. It identifies the Fermi energy difference between green InP/ZnS Quantum Dots and the ITO anode as the main cause.

How Setfos was used

Setfos was used for electrical simulations of recombination rates, helping to understand electron leakage paths and the impact of an ultrathin LiF layer, which ultimately improves device performance by enhancing electron confinement and hole injection.

Fluxim AG
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