Angle-Independent Top-Emitting Quantum-Dot Light-Emitting Diodes Using a Solution-Processed Subwavelength Scattering–Capping Layer

T. Lee, M. Lee, K. Kim, H. Lee, S.-Y. Yoon, H. Yang, S. Yu, J. Kwak, Adv. Optical Mater. 2024, 2302509.

https://doi.org/10.1002/adom.202302509

This study presents angle-independent top-emitting quantum dot light-emitting diodes (QLEDs) featuring a solution-processed subwavelength scattering–capping layer (SCPL) composed of ZnO nanoparticles. This SCPL enhances light extraction and minimizes angle-dependent color shifts, achieving a 44% improvement in external quantum efficiency without perceivable spectral shifts across viewing angles. The dual functionality of the SCPL, serving both as a capping and scattering layer, introduces a simplified, cost-effective method for fabricating high-performance, angle-stable QLED displays.

How Setfos was used

Setfos was utilized to optimize the microcavity structure of blue-emitting QLEDs by adjusting the thickness of hole transport and electron transport layers, aiming for maximum light extraction efficiency and luminance. The tool's simulations guided the experimental verification of the device's optoelectronic performance, helping to achieve superior efficiency and color stability by precisely controlling the thickness of the scattering–capping layer (SCPL).