Photophysical properties of materials for high-speed photodetection

Morteza Najarian, A., Vafaie, M., Chen, B. et al.

Nat Rev Phys6, 219–230 (2024).

https://doi.org/10.1038/s42254-024-00699-z

This paper from the research team at the University of Toronto reviews materials suitable for high-speed photodetectors, emphasizing their photophysical characteristics. It covers material classes such as organic semiconductors, perovskites, and quantum dots, discussing their performance metrics, advantages, and limitations for applications in high-speed optical communication and imaging technologies.

How Setfos was used

Simulations to understand the dynamics of electron traps were conducted using SETFOS software.

Previous
Previous

Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskites

Next
Next

Triple-junction perovskite–perovskite–silicon solar cells with power conversion efficiency of 24.4%