Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

PaperPaios
Written By Fluxim AG

Xu, Qiwei; Cheong, I Teng; Meng, Lingju; Veinot, Jonathan G. C.; Wang, Xihua

ACS Nano 2021, 15, 11, 18429–18436.

doi.org/10.1021/acsnano.1c08002

In this paper the researchers test different Si passivation tricks to optimize PbS quantum dot detectors. The two-step passivation device shows an EQE of 31% at 1280 nm and -4V.

Paios was used to perform TPV and TPC measurements to confirm longer lifetime and faster extraction, respectively, using the two-step process. This is explained by trap passivation.

Fluxim AG
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