Scrutinizing thermally stimulated current transients originating from trapped charges in organic semiconductors: A drift-diffusion study
Camilla Vael, Sandra Jenatsch, Simon Züfle, Frank Nüesch, and Beat Ruhstaller
Journal of Applied Physics 131, 205702 (2022)
Simplified physical models are insufficient to describe the transient current after thermal stimulation in organic semiconductors. This is a recent finding from the group of Beat Ruhstaller. Drift-diffusion simulations obtained with the simulation software Setfos revealed the shortcomings of the physical models.
Simulations modeling is more powerful than analytical approaches for the interpretation of experimental data by accounting for non-ideal properties like exciton splitting and non-homogenous trap densities.