Interfacial Engineering of a PCBM/AZO Electron Transport Bilayer for Efficient and Stable Inverted Perovskite Solar Cells

Ali, U., Javed, S., Qureshi, A. A., Akram, M. A.,

Chem Nano Mat 2023, 9, e202300175.

https://doi.org/10.1002/cnma.202300175

This research discusses the use of an interlayer of aluminum-doped zinc oxide (AZO) nanoparticles to suppress interfacial recombination and improve the performance and stability of perovskite solar cells. The PCBM/AZO electron transport bilayer with an optimal concentration of 2% Al dopant exhibited greatly improved power conversion efficiency (PCE) of 18.63%, VOC of 1.13 V, and FF of 73% with negligible hysteresis index of 0.04.

How Paios was used

The TPC, TPV, and impedance measurements were performed using PAIOS from Fluxim. A pulse intensity for an optimized period was used to induce a spike in photovoltage and photo-current subsequently. The impedance spectra were taken from PAIOS v. 4.4 software, and scans were taken from 10 Hz to 2 MHz at a 0 V bias in the dark.

Previous
Previous

Bulky cation hinders undesired secondary phases in FAPbI3 perovskite solar cells

Next
Next

Efficiency Enhancement of Wide Bandgap Lead Perovskite Solar Cells with PTAA Surface-Passivated with Monomolecular Layer from the Viewpoint of PTAA Band Bending